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Proceedings Article

Reactive pulsed laser deposition of WOx layers for SiC-based hydrogen sensor fabrication

[+] Author Affiliations
V. Yu. Fominski, R. I. Romanov, M. V. Demin

National Research Nuclear Univ. MEPhI (Russian Federation)

A. G. Gnedovets

A. A. Baikov Institute of Metallurgy and Materials Science (Russian Federation)

Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 799410 (February 07, 2011); doi:10.1117/12.880908
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From Conference Volume 7994

  • LAT 2010: International Conference on Lasers, Applications, and Technologies
  • Vladislav Panchenko; Gérard Mourou; Aleksei M. Zheltikov
  • Kazan, Russian Federation | August 23, 2010

abstract

Peculiarities of WOx films fabrication by reactive pulsed laser deposition for high temperature Pt-oxide-SiC devices formation were investigated. Deposition of the oxide film was also carried out in such a way as to prevent deposition of droplet fraction (deposition with anti-droplet screen). Direct Simulation Monte Carlo and Kinetic Monte Carlo methods were performed for the deposition processes modeling. The response of the SiC-based devices to hydrogen-containing gases depends on the conditions of deposition of the oxide layer. The best properties were found in the sensor obtained by depositing the scattered flux of W atoms in a shady area on SiC substrate at an oxygen pressure of 10 Pa.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

V. Yu. Fominski ; A. G. Gnedovets ; R. I. Romanov and M. V. Demin
"Reactive pulsed laser deposition of WOx layers for SiC-based hydrogen sensor fabrication", Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 799410 (February 07, 2011); doi:10.1117/12.880908; http://dx.doi.org/10.1117/12.880908


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