Contact resistance in organic transistors with different structures

Jiaxing Hu; Lianbin Niu; Rongli Guo; Baoyuan Liu

doi:10.1117/12.888227

18 February 2011 Contact resistance in organic transistors with different structures

Jiaxing Hu, Lianbin Niu, Rongli Guo, Baoyuan Liu

Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79950D (2011) https://doi.org/10.1117/12.888227
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China

Abstract

It is an important way to improve carrier mobility by reducing the contact resistance in organic transistors. In this paper, two kinds of transistors were fabricated with copper phthalocyanine semiconductor. Then by experimental methods, we tested the devices with different structure and different channel length, and analyzed the effect of structure on contact resistance as well as output characteristic. The results demonstrate that gate voltage can effectively reduce the contact resistance in the top contact device.

Citation Download Citation

Jiaxing Hu, Lianbin Niu, Rongli Guo, and Baoyuan Liu "Contact resistance in organic transistors with different structures", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950D (18 February 2011); https://doi.org/10.1117/12.888227

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