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Proceedings Article

Contact resistance in organic transistors with different structures

[+] Author Affiliations
Jiaxing Hu, Rongli Guo, Baoyuan Liu

Xi'an Technological Univ. (China)

Lianbin Niu

Chongqing Normal Univ. (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950D (February 17, 2011); doi:10.1117/12.888227
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

It is an important way to improve carrier mobility by reducing the contact resistance in organic transistors. In this paper, two kinds of transistors were fabricated with copper phthalocyanine semiconductor. Then by experimental methods, we tested the devices with different structure and different channel length, and analyzed the effect of structure on contact resistance as well as output characteristic. The results demonstrate that gate voltage can effectively reduce the contact resistance in the top contact device.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Jiaxing Hu ; Lianbin Niu ; Rongli Guo and Baoyuan Liu
"Contact resistance in organic transistors with different structures", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950D (February 17, 2011); doi:10.1117/12.888227; http://dx.doi.org/10.1117/12.888227


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