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Proceedings Article

Estimation of donor and acceptor levels in Al-doped ZnTe layers from photoluminescence measurement

[+] Author Affiliations
K. Saito, T. Saeki, X. Han, T. Tanaka, Q. Guo, M. Nishio

Saga Univ. (Japan)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950I (February 17, 2011); doi:10.1117/12.888520
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

High VI/II transport rate ratio for Al-doped ZnTe homoepitaxial layers grown by metalorganic vapor phase epitaxy leads to distinct shallow and deep donor-acceptor-pair (DAP) emissions in the photoluminescence spectrum together with donor-related bound excitonic emission (Id), independent of the growth conditions. From the analysis of excitation power dependence of shallow DAP emission, donor and acceptor levels are estimated to be ~19.5 and ~53.5meV for Al-doped ZnTe layer, respectively. Thermal quenching effects of Id and shallow DAP were examined based on two step quenching processes, and the derived donor ionization energy is of ~ 19 meV and acceptor level is of ~52.8 meV, which are in good agreement with the result on its excitation power dependence for the latter case.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

K. Saito ; T. Saeki ; X. Han ; T. Tanaka ; Q. Guo, et al.
"Estimation of donor and acceptor levels in Al-doped ZnTe layers from photoluminescence measurement", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950I (February 17, 2011); doi:10.1117/12.888520; http://dx.doi.org/10.1117/12.888520


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