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Proceedings Article

Influence of ion-doping on the photoelectric properties of mesoporous ZnO thin films

[+] Author Affiliations
Linyu Li, Yue Shen, Qishuang Wu, Meng Cao, Feng Gu, Jiancheng Zhang

Shanghai Univ. (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950M (February 17, 2011); doi:10.1117/12.888217
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

Sn, Al, Y-doped mesoporous ZnO(doping with 5 at.%) thin films (M-ZnO-5%X, X= (Sn, Al, Y))with regular mesoporous structures were successfully prepared through sol-gel and spin-coating methods, as evidenced from small angle X-ray diffraction (SAXRD) and scanning electron microscopy (SEM). The diameter/d value is about 8 nm calculated by Bragg equation. Influences of ion-doping on the photoluminescence spectra of mesoporous ZnO thin films were investigated. The energy gaps of Y, Al, Sn-doped mesoporous ZnO increase from 3.0 eV (the energy gap of undoped ZnO thin film) to 3.05, 3.08 and 3.15 eV, respectively. Dye-sensitized solar cells (DSSCs) based on Sn, Al, Y-doped ZnO photoelectrodes were structured and the properties of the cells were studied. Compared with undoped ZnO film, M-ZnO-5%Sn film showed higher solar-to-electric conversion efficiency, which may come from the broader absorbance.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Linyu Li ; Yue Shen ; Qishuang Wu ; Meng Cao ; Feng Gu, et al.
"Influence of ion-doping on the photoelectric properties of mesoporous ZnO thin films", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79950M (February 17, 2011); doi:10.1117/12.888217; http://dx.doi.org/10.1117/12.888217


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