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Proceedings Article

Preparation and characterization of (110) diamond films used for field-effect transistors

[+] Author Affiliations
Fengjuan Zhang, Qinkai Zeng, Xiaoyu Pan, Mei Bi, Xingmao Yan, Jian Huang, Ke Tang, Jijun Zhang, Linjun Wang

Shanghai Univ. (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951B (February 17, 2011); doi:10.1117/12.888210
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

In this work, H-terminated (110) diamond film, a novel active material for high-frequency and high-power field-effect transistors (FETs), was successfully prepared by hot filament chemical vapor deposition (HFCVD) method using acetone as carbon source. X-ray diffraction (XRD) measurements showed that at a lower pressure of 2 KPa and a C/H ratio of 40/200, a higher intensity of (110) diffraction peak with a narrower full width at half maximum (FWHM) was detected which meant highly (110) preferential orientation of diamond films. H-terminated films were achieved by the hydrogen gas pressure of 5KPa and a microwave power of 2.4KW. The H-terminated (110) diamond films obtained were suitable for FETs. Hall Effect measurement indicated that the sheet carrier density of (110)-oriented films was 2.2x1013cm-2, and 2.3 times higher than that of the randomly-oriented films.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Fengjuan Zhang ; Qinkai Zeng ; Xiaoyu Pan ; Mei Bi ; Xingmao Yan, et al.
"Preparation and characterization of (110) diamond films used for field-effect transistors", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951B (February 17, 2011); doi:10.1117/12.888210; http://dx.doi.org/10.1117/12.888210


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