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Proceedings Article

MBE growth and electrical properties of InSb film on GaAs substrate

[+] Author Affiliations
Y. H. Zhang, P. P. Chen, T. Lin, H. Xia, T. X. Li

Shanghai Institute of Technical Physics (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952G (February 17, 2011); doi:10.1117/12.888173
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

A series of InSb films with different thickness were grown by molecular beam epitaxy (MBE) on GaAs (001) substrates. The InSb films were characterized by the high-resolution x-ray diffraction (HRXRD), atomic force microscope (AFM) and Hall measurement. The measurements revealed that the films have good crystal quality and electrical properties. It was found that the crystal quality and the electrical properties degenerate with decrease of film thickness. And the room temperature magnetoresistance of the InSb films was also measured and discussed in detail.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Y. H. Zhang ; P. P. Chen ; T. Lin ; H. Xia and T. X. Li
"MBE growth and electrical properties of InSb film on GaAs substrate", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952G (February 17, 2011); doi:10.1117/12.888173; http://dx.doi.org/10.1117/12.888173


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