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Proceedings Article

Silicon quantum dots: photoluminescence controlling and solar cell application

[+] Author Affiliations
Wen Zhong Shen

Shanghai Jiao Tong Univ. (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952V (February 17, 2011); doi:10.1117/12.888167
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

In this invited paper, we report the effect of different annealing environments on the changeable radiative recombination characteristics of Si quantum dots (QDs), which not only provides ways to identify the photoluminescence mechanism, but also realizes the possibility to control the origin of the luminescence. We also focus on the application of Si QDs in the third-generation solar cells, with the emphasis on growth of well-ordered Si QDs, on photoresponse control of Si QDs, and on approaches to reduce the lattice thermalization loss in Si QDs solar cells.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Wen Zhong Shen
"Silicon quantum dots: photoluminescence controlling and solar cell application", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79952V (February 17, 2011); doi:10.1117/12.888167; http://dx.doi.org/10.1117/12.888167


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