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Proceedings Article

Arsenic-doped narrow-gap HgCdTe epilayers studied by infrared modulation spectroscopy

[+] Author Affiliations
Jun Shao, Wei Lu, Lu Chen, Xiang Lu, Shaoling Guo, Junhao Chu, Li He

Shanghai Institute of Technical Physics (China)

Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799503 (February 17, 2011); doi:10.1117/12.888532
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From Conference Volume 7995

  • Seventh International Conference on Thin Film Physics and Applications
  • Junhao Chu; Zhanshan Wang
  • Shanghai, China | September 24, 2010

abstract

We outline experimental data recently established in our study of in-situ arsenic (As) doped narrow-gap Hg1-xCdxTe films by infrared modulation spectroscopy. After a brief introduction of the step-scan Fourier transform infrared spectrometer-based modulation spectroscopic techniques, impurity levels and photomodulation mechanisms in As-doped HgCdTe epilayers are surveyed based on infrared modulation spectroscopic data, and the possibility of identifying cut-off wavelength and vertical uniformity of HgCdTe epilayers is indicated. The results illustrate that the infrared modulation spectroscopy will play an important role in optical characterization of narrow-gap semiconductors.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Jun Shao ; Wei Lu ; Lu Chen ; Xiang Lu ; Shaoling Guo, et al.
"Arsenic-doped narrow-gap HgCdTe epilayers studied by infrared modulation spectroscopy", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799503 (February 17, 2011); doi:10.1117/12.888532; http://dx.doi.org/10.1117/12.888532


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