Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: nanopore density control

Hafizal Yahaya; Yoshifumi Ikoma; Keiji Kuriyama; Teruaki Motooka

doi:10.1117/12.888388

18 February 2011 Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: nanopore density control

Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, Teruaki Motooka

Author Affiliations +

Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 799520 (2011) https://doi.org/10.1117/12.888388
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China

Abstract

We have investigated the nanopore formation utilizing SiC/Si (001) heteroepitaxial growth. Inverse pyramidal pits were produced by {111} faceted on the top of Si layer of Silicon on Insulator (001) substrate after SiC growth by using CH₃SiH₃ pulse jet chemical vapor deposition. Randomly distributed nanopores with the size of ~10 nm were obtained after dipped into BHF solution for etching the buried oxide layer through the top of the pit. It was found that the densities of the pits and the nanopores strongly depend on the initial SiC nucleation density which can be controlled by the pulse frequency and number of CH₃SiH₃ pulse jets.

Citation Download Citation

Hafizal Yahaya, Yoshifumi Ikoma, Keiji Kuriyama, and Teruaki Motooka "Fabrication of nanopores utilizing SiC/Si(001) heteroepitaxial growth on SOI substrates: nanopore density control", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 799520 (18 February 2011); https://doi.org/10.1117/12.888388

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