In this article there are considered two methods of increasing of the sensitivity for polymer resists. These resists are used in the process of extreme UV (EUV) lithography. The both discussed methods can be used independently of one another or in turn. The first method supposes usage specific polymers as EUV resists. The increase of the coefficient of absorption in relation to EUV waves is characteristic for these polymers. The second method is applicable only for particular positive polymer resists. This method assumes an additional irradiation of the substrate's plane by the UV light appropriate to the certain spectral range. These waves are affecting exclusively on the earlier formed polymer macro-radicals. So the number of macromolecular ruptures increases in several times only in the areas preliminary exposed by EUV radiation. Moreover the degradation of the linear resolution due to this procedure is small.© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.