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Proceedings Article

Reliable high-power single-mode GaAlAs/GaAs laser diodes mounted epi-side up

[+] Author Affiliations
Aland K. Chin, Zuntu Xu, Kejian Luo, Lisen Cheng, Al Nelson, Wei Gao

Axcel Photonics, Inc. (USA)

Proc. SPIE 5336, High-Power Diode Laser Technology and Applications II, 49 (June 1, 2004); doi:10.1117/12.528342
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From Conference Volume 5336

  • High-Power Diode Laser Technology and Applications II
  • Mark S. Zediker
  • San Jose, Ca | January 25, 2004

abstract

Reliable, high-power, single-mode, GaAlAs/GaAs, laser-diodes in the spectral region of 780 - 900 nm have been designed with procedures developed for telecom-grade, 980 nm, InGaAs/GaAlAs/GaAs pump diodes. Fifteen 808 nm, single-mode laser-diodes, mounted epitaxial-side up onto AlN submounts with eutectic Au80Sn20 solder, have been operated reliably for 3500 hours at 150 mW.

© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Aland K. Chin ; Zuntu Xu ; Kejian Luo ; Lisen Cheng ; Al Nelson, et al.
"Reliable high-power single-mode GaAlAs/GaAs laser diodes mounted epi-side up", Proc. SPIE 5336, High-Power Diode Laser Technology and Applications II, 49 (June 1, 2004); doi:10.1117/12.528342; http://dx.doi.org/10.1117/12.528342


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