Fabrication of integrated inductors on silicon for fully integrated DC-DC microconverters

Ghislain Troussier; Jean-Pierre Laur; Jean-Louis Sanchez; David Bourrier; Veronique Conedera; Monique Dilhan; Norbert Fabre; Yves Lembeye; Herve Morel; Bruno Cogitore

doi:10.1117/12.531969

30 December 2003 Fabrication of integrated inductors on silicon for fully integrated DC-DC microconverters

Ghislain Troussier, Jean-Pierre Laur, Jean-Louis Sanchez, David Bourrier, Veronique Conedera, Monique Dilhan, Norbert Fabre, Yves Lembeye, Herve Morel, Bruno Cogitore

Author Affiliations +

Proceedings Volume 5342, Micromachining and Microfabrication Process Technology IX; (2003) https://doi.org/10.1117/12.531969
Event: Micromachining and Microfabrication, 2004, San Jose, California, United States

Abstract

The market of portable instruments is growing more and more. For applications such as computers, cellular phones and microsystems, it is essential to reduce size and weight of electronic devices, including power unit supplies associated with these products. This evolution will require high efficiency on-chip DC-DC converters providing low voltage for the various Ics. Therefore, fabrication of magnetic components dedicated to power conversion becomes necessary. To miniaturize inductors, the micromachining techniques provide solutions based on low-temperature process compatible with active part of the converter. In this paper, a "spiral type" inductor topology designed for power electronics application is investigated. Thick resist molds photolithography and electroplating techniques are used to achieve the copper conductor and the NiFe laminated magnetic core.

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Ghislain Troussier, Jean-Pierre Laur, Jean-Louis Sanchez, David Bourrier, Veronique Conedera, Monique Dilhan, Norbert Fabre, Yves Lembeye, Herve Morel, and Bruno Cogitore "Fabrication of integrated inductors on silicon for fully integrated DC-DC microconverters", Proc. SPIE 5342, Micromachining and Microfabrication Process Technology IX, (30 December 2003); https://doi.org/10.1117/12.531969

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