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Proceedings Article

Novel low coherence metrology for nondestructive characterization of high-aspect-ratio microfabricated and micromachined structures

[+] Author Affiliations
Wojciech Walecki, Frank Wei, Phuc Van, Kevin Lai, Tim Lee, S. H. Lau, Ann Koo

Frontier Semiconductor Measurements, Inc. (USA)

Proc. SPIE 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III, 55 (January 24, 2004); doi:10.1117/12.530749
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From Conference Volume 5343

  • Reliability, Testing, and Characterization of MEMS/MOEMS III
  • Danelle M. Tanner; Rajeshuni Ramesham
  • San Jose, CA | January 24, 2004

abstract

Novel nondestructive method based on low coherence optical interferometry for measurement of deep etched trenches in MEMs structures is presented. The proposed technique proves to provide very reproducible results and can be easily extended to metrology of other materials such as metals and dielectrics. We present results in real life semiconductor structures and discuss practical and fundamental limits of this technique

© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Wojciech Walecki ; Frank Wei ; Phuc Van ; Kevin Lai ; Tim Lee, et al.
"Novel low coherence metrology for nondestructive characterization of high-aspect-ratio microfabricated and micromachined structures", Proc. SPIE 5343, Reliability, Testing, and Characterization of MEMS/MOEMS III, 55 (January 24, 2004); doi:10.1117/12.530749; http://dx.doi.org/10.1117/12.530749


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