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Proceedings Article

Memory elements based on thin film field-effect transistor

[+] Author Affiliations
Natella R. Aghamalyan, Ruben K. Hovsepyan, Evgenia A. Kafadaryan, Silva I. Petrosyan, Armen R. Poghosyan, Eduard S. Vardanyan

Institute for Physical Research (Armenia)

Proc. SPIE 7998, International Conference on Laser Physics 2010, 79980A (March 04, 2011); doi:10.1117/12.891259
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From Conference Volume 7998

  • International Conference on Laser Physics 2010
  • Aram V. Papoyan
  • Ashtarak, Armenia | October 12, 2010

abstract

We report the preparation and investigation of heterostructures based on ferroelectric crystals and semiconductor films. The ferroelectric field effect transistor with high transparency for visible light and high field mobility of the charge carriers has been fabricated using ZnO:Li films as a transistor channel. The possibility of use of ferroelectric field effect transistor based on ZnO:Li films as bistable element for information writing has been shown.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Natella R. Aghamalyan ; Ruben K. Hovsepyan ; Evgenia A. Kafadaryan ; Silva I. Petrosyan ; Armen R. Poghosyan, et al.
"Memory elements based on thin film field-effect transistor", Proc. SPIE 7998, International Conference on Laser Physics 2010, 79980A (March 04, 2011); doi:10.1117/12.891259; http://dx.doi.org/10.1117/12.891259


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