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Proceedings Article

Amplification of light in InxGa1-xN/GaN semiconductor quantum dot without high intensity control fields

[+] Author Affiliations
A. Soltany, H. Noshad, H. Asadpour

Univ. of Tabriz (Iran, Islamic Republic of)

A. Hajibadali

Azad Univ. of Tabriz (Iran, Islamic Republic of)

A. Soltani

Univ. of Birjand (Iran, Islamic Republic of)

Proc. SPIE 7998, International Conference on Laser Physics 2010, 79981J (March 04, 2011); doi:10.1117/12.891261
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From Conference Volume 7998

  • International Conference on Laser Physics 2010
  • Aram V. Papoyan
  • Ashtarak, Armenia | October 12, 2010

abstract

This study aims to designing quantum dot semiconductor optical amplifier (QD-SOA) by amplification without inversion technique in InxGa1-xN/GaN semiconductor quantum dot (nanostructure). To do this, eigen energies and their corresponding wave functions of a Y-type four-level atomic system were obtained by solving of Schrodinger- Poisson equations self-consistently (considering intersublevel transitions) in InxGa1-xN/GaN quantum dot. The principle of quantum optics to obtain dynamic property of quantum dot density matrix elements was employed and investigated the lasing without inversion (LWI) phenomenon in this quantum dot.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

A. Soltany ; A. Hajibadali ; A. Soltani ; H. Noshad and H. Asadpour
"Amplification of light in InxGa1-xN/GaN semiconductor quantum dot without high intensity control fields", Proc. SPIE 7998, International Conference on Laser Physics 2010, 79981J (March 04, 2011); doi:10.1117/12.891261; http://dx.doi.org/10.1117/12.891261


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