Amplification of light in InxGa1-xN/GaN semiconductor quantum dot without high intensity control fields

A. Soltany; A. Hajibadali; A. Soltani; H. Noshad; H. Asadpour

doi:10.1117/12.891261

4 March 2011 Amplification of light in In_xGa_1-xN/GaN semiconductor quantum dot without high intensity control fields

A. Soltany, A. Hajibadali, A. Soltani, H. Noshad, H. Asadpour

Proceedings Volume 7998, International Conference on Laser Physics 2010; 79981J (2011) https://doi.org/10.1117/12.891261
Event: International Conference on Laser Physics 2010, 2010, Ashtarak, Armenia

Abstract

This study aims to designing quantum dot semiconductor optical amplifier (QD-SOA) by amplification without inversion technique in In_xGa_1-xN/GaN semiconductor quantum dot (nanostructure). To do this, eigen energies and their corresponding wave functions of a Y-type four-level atomic system were obtained by solving of Schrodinger- Poisson equations self-consistently (considering intersublevel transitions) in In_xGa_1-xN/GaN quantum dot. The principle of quantum optics to obtain dynamic property of quantum dot density matrix elements was employed and investigated the lasing without inversion (LWI) phenomenon in this quantum dot.

Citation Download Citation

A. Soltany, A. Hajibadali, A. Soltani, H. Noshad, and H. Asadpour "Amplification of light in In_xGa_1-xN/GaN semiconductor quantum dot without high intensity control fields", Proc. SPIE 7998, International Conference on Laser Physics 2010, 79981J (4 March 2011); https://doi.org/10.1117/12.891261

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