Electrical characteristics of DLC- (n, p)-Si heterojunctions fabricated by ion-assisted plasma-enhanced deposition and
pulsed laser deposition methods were investigated. The mechanisms of carrier flow across the fabricated junctions were
analyzed.
Keywords: ion-assisted plasma-enhanced deposition, pulsed laser deposition, DLC- (n, p)-Si heterojunctions, currentvoltage
& capacitance- voltage characteristics.
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