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Proceedings Article

Germanium on double-SOI photodetectors for 1550-nm operation

[+] Author Affiliations
Olufemi I. Dosunmu, Matthew K. Emsley, M. S. Unlu

Boston Univ. (USA)

Douglas D. Cannon, Jifeng Liu, Lionel C. Kimerling

Massachusetts Institute of Technology (USA)

Bruno Ghyselen

SOITEC SA (France)

Proc. SPIE 5353, Semiconductor Photodetectors, 65 (June 8, 2004); doi:10.1117/12.532046
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From Conference Volume 5353

  • Semiconductor Photodetectors
  • Kurt J. Linden; Eustace L. Dereniak
  • San Jose, CA, United States | January 26, 2004

abstract

We have fabricated and characterized the first resonant cavity enhanced (RCE) germanium photodetectors on double silicon-on-insulator substrates (Ge/DSOI) for operation around the 1550 nm communication wavelength. The Ge layer is grown through a novel two-step UHV/CVD process, while the underlying double-SOI substrate is formed through an ion-cut process. Absorption measurements of an undoped Ge-on-Si (Ge/Si) structure reveal a red-shift of the Ge absorption edge in the NIR, due primarily to a strain-induced bandgap narrowing within the Ge film. By using the strained-Ge absorption coefficients extracted from the absorption measurements, in conjunction with the known properties of the DSOI substrate, we were able to design strained-Ge/DSOI photodetectors optimized for 1550 nm operation. We predict a quantum efficiency of 76% at 1550 nm for a Ge layer thickness of only 860 nm as a result of both strain-induced and resonant cavity enhancement, compared to 2.3% for the same unstrained Ge thickness in a single-pass configuration. We also estimate a transit-time limited bandwidth of 28 GHz. Although the fabricated Ge/DSOI photodetectors were not optimized for 1550 nm operation, we were able to demonstrate an over four-fold improvement in the quantum efficiency, compared to its single-pass counterpart.

© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Olufemi I. Dosunmu ; Douglas D. Cannon ; Matthew K. Emsley ; Bruno Ghyselen ; Jifeng Liu, et al.
"Germanium on double-SOI photodetectors for 1550-nm operation", Proc. SPIE 5353, Semiconductor Photodetectors, 65 (June 8, 2004); doi:10.1117/12.532046; http://dx.doi.org/10.1117/12.532046


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