Improved measurement-based modeling of inverted-MSM photodetectors using on-wafer calibration structures

Cheolung Cha; Jae Hong Kim; Zhaoran Huang; Nan Marie Jokerst; Martin A. Brooke

doi:10.1117/12.531640

8 June 2004 Improved measurement-based modeling of inverted-MSM photodetectors using on-wafer calibration structures

Cheolung Cha, Jae Hong Kim, Zhaoran Huang, Nan Marie Jokerst, Martin A. Brooke

Proceedings Volume 5353, Semiconductor Photodetectors; (2004) https://doi.org/10.1117/12.531640
Event: Integrated Optoelectronic Devices 2004, 2004, San Jose, CA, United States

Abstract

Photodetectors (PDs) are an important active device in optoelectronic integrated circuits (OEICs), and, for shorter haul interconnections where circuit (e.g. transimpedance amplifier (TIA)) noise may be the dominant noise in receivers, metal-semiconductor-metal photodiodes (MSM PDs) are attractive due to their low capacitance per unit area compared to PIN photodetectors and the ease of monolithic integration with field effect transistors (FETs). Inverted-MSM PDs (I-MSM PDs), which are thin film MSM PDs with the fingers on the bottom of the device, have demonstrated higher responsivities compared to conventional MSM PDs while maintaining small capacitance per unit area, low dark current (~nA), and high speed. However, the modeling of MSM PDs and I-MSM PDs for insertion into circuit simulators for integrated PD/TIA modeling has not been reported. In this paper, an accurate high-frequency equivalent circuit-level model of thin film I-MSM PDs is obtained using an on-wafer measurement-based modeling technique. This circuit-level model of MSM PDs can be used for capacitance sensitive preamplifier design for co-optimization with widely used simulators (ADS and HSPICE). The obtained circuit-level model shows good agreement with measured s-parameters.

Citation Download Citation

Cheolung Cha, Jae Hong Kim, Zhaoran Huang, Nan Marie Jokerst, and Martin A. Brooke "Improved measurement-based modeling of inverted-MSM photodetectors using on-wafer calibration structures", Proc. SPIE 5353, Semiconductor Photodetectors, (8 June 2004); https://doi.org/10.1117/12.531640

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Calibration

Palladium

Circuit switching

Device simulation

Eye models

Photodetectors

Capacitance

Show All Keywords

Keywords/Phrases

Search In:

Publication Years