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Proceedings Article

3D simulation and analysis of AlGaN/GaN ultraviolet light-emittings diodes

[+] Author Affiliations
Joachim Piprek, Thomas M. Katona, Steven P. DenBaars

Univ. of California/Santa Barbara (USA)

Simon Li

Crosslight Software Inc. (USA)

Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, 127 (June 21, 2004); doi:10.1117/12.543266
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From Conference Volume 5366

  • Light-Emitting Diodes: Research, Manufacturing, and Applications VIII
  • Steve A. Stockman; H. Walter Yao; E. Fred Schubert
  • San Jose, CA, United States | January 26, 2004

abstract

Compact ultraviolet light sources are currently of high interest for applications in solid-state lighting, short-range communication, and bio-chemical detection. Our nitride-based light-emitting diode (LED) includes AlGaN quantum wells with an emission wavelength of approximately 340 nm. In this paper, we analyze internal device physics by three-dimensional (3D) numerical simulation. The simulation incorporated a 3D drift-diffusion model for the carrier transport, the quantum well (QW) energy band-structure including interface polarization charges, the local QW spontaneous emission spectrum, as well as 3D raytracing for photon extraction. The simulation results showed good agreement with measurements. Internal physical mechanisms such as current crowding, carrier leakage, and carrier recombination were investigated. Nanoscale effects exhibited a strong influence on the LED performance.

© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Joachim Piprek ; Thomas M. Katona ; Steven P. DenBaars and Simon Li
"3D simulation and analysis of AlGaN/GaN ultraviolet light-emittings diodes", Proc. SPIE 5366, Light-Emitting Diodes: Research, Manufacturing, and Applications VIII, 127 (June 21, 2004); doi:10.1117/12.543266; http://dx.doi.org/10.1117/12.543266


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