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Proceedings Article

Scatterometry feasibility studies for 0.13-micron flash memory lithography applications: enabling integrated metrology

[+] Author Affiliations
Kevin R. Lensing, Clint Miller, Geoff Chudleigh

FASL, LLC (USA)

Bryan Swain, Michael Laughery

Timbre Technologies, Inc. (USA)

Anita Viswanathan

Tokyo Electron America, Inc. (USA)

Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, 307 (May 24, 2004); doi:10.1117/12.533813
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From Conference Volume 5375

  • Metrology, Inspection, and Process Control for Microlithography XVIII
  • Richard M. Silver
  • Santa Clara, CA | February 22, 2004

abstract

A series of experiments were performed to determine if the ThermaWave INTEGRA CCDi reflectometer combined with Timbre Technologies" Optical Digital Profiler (ODP) software could meet the requirements for lithography cell integration and process control of critical 0.13-micron Flash memory applications. Shallow Trench Isolation (STI), First Poly Gate, Stacked Gate and Aluminum Interconnect layers were examined as a part of this study. ODP models were developed for each of these applications and their output was compared to Critical Dimension Scanning Electron Microscopy (CDSEM) and cross-section SEM to demonstrate adequate correlation to incumbent metrology techniques. ODP is shown herein to correlate to CDSEM while providing the throughput required to measure every wafer without creating a bottleneck for the lithography cell. Experimental results also suggest that, in many cases, ODP can deliver profile determination beyond the fundamental capability of standard in-line metrology techniques.

© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Kevin R. Lensing ; Clint Miller ; Geoff Chudleigh ; Bryan Swain ; Michael Laughery, et al.
"Scatterometry feasibility studies for 0.13-micron flash memory lithography applications: enabling integrated metrology", Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, 307 (May 24, 2004); doi:10.1117/12.533813; http://dx.doi.org/10.1117/12.533813


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