Design of dissolution inhibitors for chemically amplified photolithographic systems

Charles R. Chambers; Shiro Kusumoto; Brian P. Osborn; Alok Vasudev; Michitaka Ootani; Leonidas Walthal; Hale McMichael; Paul A. Zimmerman; Willard E. Conley; C. Grant Willson

doi:10.1117/12.535941

14 May 2004 Design of dissolution inhibitors for chemically amplified photolithographic systems

Charles R. Chambers, Shiro Kusumoto, Brian P. Osborn, Alok Vasudev, Michitaka Ootani, Leonidas Walthal, Hale McMichael, Paul A. Zimmerman, Willard E. Conley, C. Grant Willson

Author Affiliations +

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.535941
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Current semiconductor manufacturing utilizes exposure wavelengths from 365 nm to 193 nm, and current research is centered on photoresist development for 157 nm. Our research group discovered the strong inhibition response in the fluorocarbon resins designed for use at 157 nm. We have been investigating dissolution inhibitors (DIs), some of which also serve as photoacid generators (PAGs), that strongly inhibit the dissolution of poly(2-(3,3,3-trifluoro-2-trifuoromethyl-2-hydroxypropyl) bicyclo[2.2.1]heptane-5-ene)(PNBHFA) (1) and the Asahi glass RS001 polymer (2). These inhibiting PAGs, in particular, result in the creation of 2-component resist systems consisting only of the resin polymer and the PAG-DI. This design enables greater ease of formulation, reduces the number of variables present in resist development, and offers improvements in sensitivity and line edge roughness. The synthetic approach has been to design transparent, inhibiting compounds for use at 157 nm. However, during our investigation of these compounds, we found that there is an inherent “backwards compatibility” for these PAGs and DIs at 193 nm, 248 nm and 365 nm. This has created the ability to effectively design dissolution inhibitors, photoactive or otherwise, that span virtually all of the wavelengths used in photolithographic processes today. Here we will present the design, development and imaging of modern dissolution inhibitors suitable for use in a wide range of photolithography technologies.

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Charles R. Chambers, Shiro Kusumoto, Brian P. Osborn, Alok Vasudev, Michitaka Ootani, Leonidas Walthal, Hale McMichael, Paul A. Zimmerman, Willard E. Conley, and C. Grant Willson "Design of dissolution inhibitors for chemically amplified photolithographic systems", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535941

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KEYWORDS

Polymers

Distributed interactive simulations

Absorbance

Photoresist materials

Picture Archiving and Communication System

Scanning electron microscopy

Semiconducting wafers

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