Mist deposition of thin photoresist films

William J. Mahoney III; Paul Roman; Paul Mumbauer; Jerzy Ruzyllo

doi:10.1117/12.534149

14 May 2004 Mist deposition of thin photoresist films

William J. Mahoney III, Paul Roman, Paul Mumbauer, Jerzy Ruzyllo

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.534149
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

This experiment is concerned with the development of mist deposition technology as an alternative to spin-on method of photoresist deposition in microelectronic manufacturing. A commercial 200 mm mist deposition tool is used in this study. The results obtained demonstrate effectiveness of mist deposition in resist processing. Basic parameters of resist mist deposition are determined. Deposition rate can be controlled within 10 to 50 nm/min range. Using a stepper and UV-5 photoresist 250 nm patterns were readily defined in 120 nm thick mist deposited resist. It is postulated that mist deposition offers advantages over spin-on process in the case of very thin resist technology as well as in the case of resist deposition on large, non-circular substrates.

Citation Download Citation

William J. Mahoney III, Paul Roman, Paul Mumbauer, and Jerzy Ruzyllo "Mist deposition of thin photoresist films", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.534149

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