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Proceedings Article

Feasibility of immersion lithography

[+] Author Affiliations
Soichi Owa, Hiroyuki Nagasaka, Yuuki Ishii

Nikon Corp. (Japan)

Osamu Hirakawa, Taro Yamamoto

Tokyo Electron Kyushu Ltd. (Japan)

Proc. SPIE 5377, Optical Microlithography XVII, 264 (May 28, 2004); doi:10.1117/12.536852
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From Conference Volume 5377

  • Optical Microlithography XVII
  • Bruce W. Smith
  • Santa Clara, CA | February 22, 2004

abstract

Feasibility of ArF (193nm) immersion lithography is reported based on our recent experimental and theoretical studies. Local fill method of water, edge shot, high NA projection optics, focus sensing, water supply, polarization effect, polarized illumination and resist are investigated. Although we recognize there are some remaining engineering risks, we have judged that ArF immersion lithography is basically feasible and is a very promising method that can reach the half pitch required for the 45nm node. On this basis we have planned our development schedule of immersion exposure tools.

© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Soichi Owa ; Hiroyuki Nagasaka ; Yuuki Ishii ; Osamu Hirakawa and Taro Yamamoto
"Feasibility of immersion lithography", Proc. SPIE 5377, Optical Microlithography XVII, 264 (May 28, 2004); doi:10.1117/12.536852; http://dx.doi.org/10.1117/12.536852


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