Paper
28 May 2004 Through pitch intensity balancing and phase error analysis of 193-nm alternating phase shift masks
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Abstract
An investigation of the predominant industry approaches to transmission balance and phase error through pitch of Alternating Aperture Phase-Shifting Mask manufacturing approaches has been conducted. Previous theoretical studies have shown both clear pattern bias and phase error changes through pitch. These variations are significant for the Low K1 applications. Several approaches have been proposed and discussed in previous papers, including undercut, asymmetric pattern biasing, mask phase-only, dual trench, SCAA, and others. Although much of the discussion has focused on lithographic process performance, some of the constraints in the mask making infrastructure may differentiate between processes of similar performance. Two manufacturable approaches, wet etch undercut and asymmetric pattern biasing, have been studied by electromagnetic field simulation to explore the across pitch performance at 193nm. This has been compared to experimental measurement of photomasks measured with a 193 Zeiss AIMS (Aerial Image Microscope System). Both mask fabrication approaches are compared to the simulations. The performance of both mask approaches to pattern bias and phase error was evaluated, and the feasibility of through pitch correction and its impact on design and manufacturability of the photomask is discussed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kent H. Nakagawa, Gregory P. Hughes, Keuntaek Park, and Peter Buck "Through pitch intensity balancing and phase error analysis of 193-nm alternating phase shift masks", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.535956
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KEYWORDS
Photomasks

Etching

Phase shifts

Wet etching

Error analysis

Manufacturing

Mask making

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