Image fidelity verification: contourIFV

Ioana Graur; Rama N. Singh; Donald J Samuels

doi:10.1117/12.537490

3 May 2004 Image fidelity verification: contourIFV

Ioana Graur, Rama N. Singh, Donald J Samuels

Proceedings Volume 5379, Design and Process Integration for Microelectronic Manufacturing II; (2004) https://doi.org/10.1117/12.537490
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

The rapidly escalating complexity of resolution enhancement techniques (RET), now commonplace in leading edge lithography, requires accurate verification to avoid yield and performance problems on the patterned wafers. Model-based verification techniques that have been derived from optical proximity correction (OPC) obtain the required checking speed from sparse sampling of the layout at discrete evaluation points along the edges of layout patterns. This sparse sampling allows accurately calibrated models to be used for full chip checking applications. However, there is a demonstrated risk of missing significant patterning errors due to the sparse and edge-centric sampling of the layout. Grid-based simulation approaches which calculate the image on a fine grid over the entire layout space accurately detect patterning problems anywhere in the layout, but can be executed at reasonable runtimes for aerial image models only. The challenge for full-chip model-based verification of RET-enhanced layouts is, therefore, a trade-off between sparse, edge-centric simulation using accurate models versus simulations using approximate models over the entire layout space. This paper presents an approach, termed contourIFV, that has been demonstrated to overcome the aforementioned problems and has been shown to provide significant value in the verification of the RET and OPC prescription.

Citation Download Citation

Ioana Graur, Rama N. Singh, and Donald J Samuels "Image fidelity verification: contourIFV", Proc. SPIE 5379, Design and Process Integration for Microelectronic Manufacturing II, (3 May 2004); https://doi.org/10.1117/12.537490

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available