Diffusive and ballistic regimes for transfer resistances

Valery Yu. Vinnichenko; Anatoly V. Chernikh; Gennady M. Mikhailov

doi:10.1117/12.558777

28 May 2004 Diffusive and ballistic regimes for transfer resistances

Valery Yu. Vinnichenko, Anatoly V. Chernikh, Gennady M. Mikhailov

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.558777
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

We investigated transfer resistance of single crystalline W (001) nanostructure in the temperature interval 4.2 - 295 K. It is found that the crossover from liquid - to gas-like flow electron transport takes place when electrode spacing is comparable to electron mean free path. Under diffusive electron transport both positive and negative signs of the transfer resistance are observed in the depending on the geometry of applied current. The latter is not found at ballistic electron transport. Transfer resistances change faster than liner dependence against the reversal electron mean free path.

Citation Download Citation

Valery Yu. Vinnichenko, Anatoly V. Chernikh, and Gennady M. Mikhailov "Diffusive and ballistic regimes for transfer resistances", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.558777

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