Subthreshold behavior in nanoparticle-dispersed poly(3-hexylthiophene) FET

Manabu Yoshida; Sei Uemura; Satoshi Hoshino; Takehito Kodzasa; Toshihide Kamata

doi:10.1117/12.559103

18 October 2004 Subthreshold behavior in nanoparticle-dispersed poly(3-hexylthiophene) FET

Manabu Yoshida, Sei Uemura, Satoshi Hoshino, Takehito Kodzasa, Toshihide Kamata

Proceedings Volume 5522, Organic Field-Effect Transistors III; (2004) https://doi.org/10.1117/12.559103
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

We studied on the effect of nanoparticle dispersion on electrical properties of polymer field effect transistor (FET). Various kinds of powder materials were prepared and dispersed into P3HT films. In order to determine the electronic structures of particle-dispersed P3HT films, photoelectron emission spectra were measured. Using these spectra ionization potentials (I_Ps) of these films were determined. The shifts of IP originated from the particle dispersions were very small (from 4.69 to 4.72eV). Similarly, any differences were not observed between the electron absorption spectra of the particle-dispersed P3HT films and that of the pristine P3HT films. According to these results, no chemical reactions would occur between P3HT matrices and dispersed particles. On the other hand, Fermi levels of particle-dispersed P3HT films were obviously shifted from that of the pristine P3HT film. The shift was well correlated to the difference between the workfunction of P3HT and that of the dispersed material. Namely, the dispersion of the particles with the lower workfunction contributed to the decrease of workfunction of the P3HT film. Further, the decrease of workfunction of P3HT film resulted in the decrease of the off-current values of the P3HT-FET. This would be because the electrons transferred from the dispersed particles neutralized the excess holes in the P3HT film. Actually, the Ag particle dispersion remarkably improved on-off ratio of the P3HT-FET.

Citation Download Citation

Manabu Yoshida, Sei Uemura, Satoshi Hoshino, Takehito Kodzasa, and Toshihide Kamata "Subthreshold behavior in nanoparticle-dispersed poly(3-hexylthiophene) FET", Proc. SPIE 5522, Organic Field-Effect Transistors III, (18 October 2004); https://doi.org/10.1117/12.559103

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available