EUV microlithography: a challenge for optical metrology

Gunther Seitz; Stefan Schulte; Udo Dinger; Oliver Hocky; Bernhard Fellner; Markus Rupp

doi:10.1117/12.556317

18 October 2004 EUV microlithography: a challenge for optical metrology

Gunther Seitz, Stefan Schulte, Udo Dinger, Oliver Hocky, Bernhard Fellner, Markus Rupp

Proceedings Volume 5533, Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications II; (2004) https://doi.org/10.1117/12.556317
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

EUVL (extreme ultraviolet lithography), utilizing an actinic wavelength of about 13 nm , appears to be the most promising technology approach to reach the 30 nm node. Calling for diffraction limited imaging performance, EUV demand unprecedented requirements for figure metrology and fabrication technology. This paper gives an overview over problems rising from the interferometric measurement of aspheric EUV mirrors.

Citation Download Citation

Gunther Seitz, Stefan Schulte, Udo Dinger, Oliver Hocky, Bernhard Fellner, and Markus Rupp "EUV microlithography: a challenge for optical metrology", Proc. SPIE 5533, Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications II, (18 October 2004); https://doi.org/10.1117/12.556317

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