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Proceedings Article

EUV microlithography: a challenge for optical metrology

[+] Author Affiliations
Gunther Seitz, Stefan Schulte, Udo Dinger, Oliver Hocky, Bernhard Fellner, Markus Rupp

Carl Zeiss SMT AG (Germany)

Proc. SPIE 5533, Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications II, 20 (October 18, 2004); doi:10.1117/12.556317
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From Conference Volume 5533

  • Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications II
  • Ali M. Khounsary; Udo Dinger; Kazuya Ota
  • Denver, CO | August 02, 2004

abstract

EUVL (extreme ultraviolet lithography), utilizing an actinic wavelength of about 13 nm , appears to be the most promising technology approach to reach the 30 nm node. Calling for diffraction limited imaging performance, EUV demand unprecedented requirements for figure metrology and fabrication technology. This paper gives an overview over problems rising from the interferometric measurement of aspheric EUV mirrors.

© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Gunther Seitz ; Stefan Schulte ; Udo Dinger ; Oliver Hocky ; Bernhard Fellner, et al.
"EUV microlithography: a challenge for optical metrology", Proc. SPIE 5533, Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications II, 20 (October 18, 2004); doi:10.1117/12.556317; http://dx.doi.org/10.1117/12.556317


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