Paper
20 December 2004 Applications of defect engineering to the fabrication of silicon-based photonic devices
Phil John Foster, Jonathan K. Doylend, Peter Mascher, Andrew Peter Knights, Paul G. Coleman
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Abstract
This paper describes work investigating the impact of lattice defects on the attenuation of optical signals at wavelengths around 1550nm in silicon rib waveguides. Using Fourier transform infrared spectroscopy it is shown that high energy proton irradiation of silicon induces excess optical absorption peaked at a wavelength of 1800nm, but extending below 1600nm. This absorption is related to the introduction of silicon divacancy defects. It is further demonstrated that silicon divacancy concentration is accurately determined for a range of proton doses using positron annihilation spectroscopy and successfully predicted using an analytical expression proposed previously. Low loss rib waveguides were fabricated in silicon-on-insulator substrates. These waveguides were subsequently implanted with silicon ions at an energy of 2.8MeV through photolithographically defined mask windows of various lengths. The additional optical loss as a result of the defects introduced by the implantation process was accurately determined. For a dose of 2.5x1014cm-2, the loss is greater than 500dBcm-1. Finally, it is shown that excess absorption can be predicted using the same analytical expression for the determination of vacancy concentration, thus providing a straightforward method for the design of integrated, on-chip optical absorbers in silicon photonic circuits.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Phil John Foster, Jonathan K. Doylend, Peter Mascher, Andrew Peter Knights, and Paul G. Coleman "Applications of defect engineering to the fabrication of silicon-based photonic devices", Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, (20 December 2004); https://doi.org/10.1117/12.563330
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Cited by 2 scholarly publications.
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KEYWORDS
Silicon

Waveguides

Absorption

Signal attenuation

Integrated optics

Ion implantation

Ions

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