Fabrication and properties for white LED with InGaN SQW

Zhonghui Li; Zhijian Yang; Xiaomin Ding; Guoyi Zhang; Yuchun Feng; Baoping Guo; Hanben Niu

doi:10.1117/12.570640

12 January 2005 Fabrication and properties for white LED with InGaN SQW

Zhonghui Li, Zhijian Yang, Xiaomin Ding, Guoyi Zhang, Yuchun Feng, Baoping Guo, Hanben Niu

Proceedings Volume 5632, Light-Emitting Diode Materials and Devices; (2005) https://doi.org/10.1117/12.570640
Event: Photonics Asia, 2004, Beijing, China

Abstract

High brightness white light-emitting diode (LED) was fabricated by using the self-produced InGaN single quantum-well (SQW) blue LED chip and YAG:Ce³⁺ phosphor. The luminous intensity of the white LED was up to 2.3cd, the chromaticity coordinate was (0.28,0.34), and the color-rendering index was about 75 at forward current of 20mA and room temperature.

Citation Download Citation

Zhonghui Li, Zhijian Yang, Xiaomin Ding, Guoyi Zhang, Yuchun Feng, Baoping Guo, and Hanben Niu "Fabrication and properties for white LED with InGaN SQW", Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); https://doi.org/10.1117/12.570640

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