The phenomena and nature of characterized nano-radiation

Shaomin Wang; Laigui Hu; Daomu Zhao; Yonghang Shen; Jian Sha

doi:10.1117/12.574836

9 February 2005 The phenomena and nature of characterized nano-radiation

Shaomin Wang, Laigui Hu, Daomu Zhao, Yonghang Shen, Jian Sha

Proceedings Volume 5635, Nanophotonics, Nanostructure, and Nanometrology; (2005) https://doi.org/10.1117/12.574836
Event: Photonics Asia, 2004, Beijing, China

Abstract

Laser-induced white light emission from nano-carbon as well as other nanostructured materials in vacuum is presented in this article. It is observed only when the excitation laser intensity is higher than a threshold value (10³-10⁶ W/cm²). For the semiconductor nano-materials such as a cadmium sulphide (CdS) nano-crystal, a deep UV emission is also captured besides the white light emission. Spectra show that the nano-CdS radiate the stronger deep UV light with peak wavelengths about 210 and 215 nm. According this, a strong deep UV emission with a concomitant second harmonic generation at room temperature is also observed in a normal InGaAs laser diode (LD) operating at 980 nm. The output power of the UV radiation is estimated approaching to 0.1 mW. Since the wavelengths of the UV emission from nano-CdS are a little shorter than those of the InGaAs LD. These make it possible to develop deep UV wavelength LDs by doping different semiconductor nano-materials into the active layers besides using the III-nitride compound and ZnO semiconductor materials.

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Shaomin Wang, Laigui Hu, Daomu Zhao, Yonghang Shen, and Jian Sha "The phenomena and nature of characterized nano-radiation", Proc. SPIE 5635, Nanophotonics, Nanostructure, and Nanometrology, (9 February 2005); https://doi.org/10.1117/12.574836

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KEYWORDS

Deep ultraviolet

Ultraviolet radiation

Indium gallium arsenide

Nanostructuring

Semiconductor lasers

Semiconductors

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