Paper
16 February 2004 Study of interface properties of electrodes for the Alq3 base OLEDs
A. Uddin, C. B. Lee, X. Hu
Author Affiliations +
Proceedings Volume 5648, Smart Materials III; (2004) https://doi.org/10.1117/12.569743
Event: Smart Materials, Nano-, and Micro-Smart Systems, 2004, Sydney, Australia
Abstract
We have studied the carrier transport properties of amorphous organic material tris (8-hydroxyquinoline) aluminum (Alq3) for Al, LiF/Al, NaCl/Al, KBr/Al cathodes and ITO and ITO/HTL anodes at room temperature. The investigation was made by the current - voltage, luminescence - current characteristic measurements. The current density increases by several orders for LiF/Al and NaCl/Al cathodes over that of Al at a given bias voltage. The electron injection processes at the metal/organic contact dominate the current - voltage characteristics. The carrier injection seems to be limited by the charge hopping of interfacial molecular sites. We have also developed a process method for the preparation of anodic indium-tin-oxide (ITO) surface for high efficient organic light emitting diodes (OLEDs). X-ray photoelectron spectroscopy (XPS) was used to measure atomic concentration of each element In, Sn, O and C on treated ITO surface. Scanning electron microscopy and atomic force microscopy were used to scan the surface profiles of ITO. The OLED performance considerably improved by the ITO surface treatments as well as by ITO/HTL anode due to the reduction of holes injection barrier between ITO and Alq3 interface.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Uddin, C. B. Lee, and X. Hu "Study of interface properties of electrodes for the Alq3 base OLEDs", Proc. SPIE 5648, Smart Materials III, (16 February 2004); https://doi.org/10.1117/12.569743
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KEYWORDS
Aluminum

Organic light emitting diodes

Interfaces

Tin

Metals

Atomic force microscopy

Hydrogen

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