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Proceedings Article

> 360 W and > 70% efficient GaAs-based diode lasers

[+] Author Affiliations
Paul Crump, Jun Wang, Trevor Crum, Suhit Das, Mark DeVito, Weimin Dong, Jason Farmer, Yan Feng, Mike Grimshaw, Damian Wise, Shiguo Zhang

nLight Corp. (USA)

Proc. SPIE 5711, High-Power Diode Laser Technology and Applications III, 21 (March 17, 2005); doi:10.1117/12.602577
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From Conference Volume 5711

  • High-Power Diode Laser Technology and Applications III
  • Mark S. Zediker
  • San Jose, CA | January 22, 2005

abstract

High power GaAs-based high power diode bars produce wavelengths in the range of 780 to 980 nm and are widely used for pumping a broad range of rare earth doped solid-state lasers. As the markets for these laser systems mature, diode lasers that operate at higher power levels, greater overall efficiency, and higher reliability are in high demand. In this paper we report efficiencies of over 70% in the 9xx-nm band, continuous wave power levels over 340 Watts in the 8xx-nm band, and reliability data at or above 100 Watts. We will also review the latest advances in performance and detail the basic physics and material science required to achieve these results.

© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Paul Crump ; Jun Wang ; Trevor Crum ; Suhit Das ; Mark DeVito, et al.
"> 360 W and > 70% efficient GaAs-based diode lasers", Proc. SPIE 5711, High-Power Diode Laser Technology and Applications III, 21 (March 17, 2005); doi:10.1117/12.602577; http://dx.doi.org/10.1117/12.602577


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