Paper
28 April 2005 Gain compression coefficient and above-threshold linewidth enhancement factor in InAs/GaAs quantum DFB lasers
H. Su, L. Zhang, A. L. Gray, R. Wang, P. M. Varangis, L. F. Lester
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Abstract
We measure, for the first time, the gain compression coefficient and above-threshold linewidth enhancement factor (alpha parameter) in quantum dot (QD) distributed feedback lasers (DFB) by time-resolved-chirp (TRC) characterization. The alpha parameter is measured to be 2.6 at threshold and increases to 8 when the output power of the QD DFB is increased to 3 mW. The dependence of the above-threshold alpha parameter on the optical power is found to be stronger than the optical gain compression effect alone can predict. The inhomogeneous gain broadening, gain saturation at the ground states and carrier filling in the excited states in QDs are proposed to explain the results.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Su, L. Zhang, A. L. Gray, R. Wang, P. M. Varangis, and L. F. Lester "Gain compression coefficient and above-threshold linewidth enhancement factor in InAs/GaAs quantum DFB lasers", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); https://doi.org/10.1117/12.591105
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Cited by 14 scholarly publications.
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KEYWORDS
Quantum wells

Laser damage threshold

Modulation

Quantum dots

Semiconductor lasers

Laser applications

Measurement devices

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