Full Content is available to subscribers

Subscribe/Learn More  >
Proceedings Article

High-power high-brightness tapered diode lasers and amplifiers

[+] Author Affiliations
Marc T. Kelemen, Juergen Weber, Michael Mikulla, Guenter Weimann

Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)

Proc. SPIE 5723, Optical Components and Materials II, 198 (April 11, 2005); doi:10.1117/12.601197
Text Size: A A A
From Conference Volume 5723

  • Optical Components and Materials II
  • Shibin Jiang; Michel J. Digonnet
  • San Jose, California, United States | January 22, 2005

abstract

Tapered high-brightness diode lasers are finding use in a variety of applications today. An increased brightness makes tapered lasers especially attractive for fiber applications, even for telecom applications like pumping of Er-doped fiber amplifiers or Raman amplifiers. In addition the use of tapered lasers in external resonator configurations is common practice for several applications, such as frequency doubling, which necessitate diffraction-limited tunable narrow linewidths together with high output powers. However, two disadvantages of the tapered laser concept are the reduced output power provoked by their additional resonator losses and the astigmatism. In case of high-brightness diode lasers it is important to discuss the methods needed for an advanced output power also from the beam quality point of view. The control of astigmatism is essential for designing micro-optics for laser modules. We have realized high-efficiency ridge-waveguided tapered diode lasers. These low modal gain, single quantum well InGaAs/AlGaAs devices emitting at 980 nm were grown by molecular beam epitaxy. The influence of the thermal resistance and of the tapered section length on output power as well as on beam quality has been investigated. The high-efficiency tapered diode lasers show promising output powers of more than 5 W and a nearly diffraction limited behav-iour up to 4 W. Used in an external-cavity configuration these tunable diode lasers show output powers of more than 3 W. The beam-quality parameter remains well below M2 < 1.5 for output powers up to 2 W.

© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Marc T. Kelemen ; Juergen Weber ; Michael Mikulla and Guenter Weimann
"High-power high-brightness tapered diode lasers and amplifiers", Proc. SPIE 5723, Optical Components and Materials II, 198 (April 11, 2005); doi:10.1117/12.601197; http://dx.doi.org/10.1117/12.601197


Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).

Figures

Tables

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement


  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.