Si-based optical receivers

Joe C. Campbell; Jungwoo Oh; Zhihong Huang

doi:10.1117/12.593538

7 March 2005 Si-based optical receivers

Joe C. Campbell, Jungwoo Oh, Zhihong Huang

Proceedings Volume 5730, Optoelectronic Integration on Silicon II; (2005) https://doi.org/10.1117/12.593538
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Two Ge on Si photodetectors are reported: MSM photodiodes with an amorphous Ge layer to increase the Schottky barrier height and Ge/Ge_xSi_1-x/Si heterojunction photodiodes. Monolithic fabrication of Ge PIN photodiodes with Si MOSFETs has also been successfully demonstrated.

Citation Download Citation

Joe C. Campbell, Jungwoo Oh, and Zhihong Huang "Si-based optical receivers", Proc. SPIE 5730, Optoelectronic Integration on Silicon II, (7 March 2005); https://doi.org/10.1117/12.593538

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