Paper
25 March 2005 High performance LWIR type II InAs/GaSb superlattice photodetectors and infrared focal plane arrays
Yajun Wei, Andrew Hood, Aaron Gin, Vahid Yazdanpanah, Manijeh Razeghi, Meimei Tidrow
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Abstract
Dark current has become a significant limiting factor for the development of the Type II InAs/GaSb superlattices technology. Experimental results showed that at liquid nitrogen temperature the dominating dark current under reverse bias is the generation-recombination current before the tunneling current turns on. Recent research on the source of the dark current indicated that the Auger recombinations might play a very important role in the superlattice diode dark current. With proper design of the superlattice structure, we have been able to reduce the dark current several orders of magnitude in the LWIR range. The superlattice diode performance was also improved dramatically. Infrared focal plane arrays based on these superlattices will also be discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yajun Wei, Andrew Hood, Aaron Gin, Vahid Yazdanpanah, Manijeh Razeghi, and Meimei Tidrow "High performance LWIR type II InAs/GaSb superlattice photodetectors and infrared focal plane arrays", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.597141
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Cited by 2 scholarly publications.
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KEYWORDS
Superlattices

Staring arrays

Diodes

Long wavelength infrared

Infrared radiation

Gallium antimonide

Sensors

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