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Proceedings Article

Near-field and far-field dynamics of (Al,In)GaN laser diodes

[+] Author Affiliations
Ulrich T. Schwarz, Markus Pindl

Univ. Regensburg (Germany)

Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, 229 (April 11, 2005); doi:10.1117/12.591044
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From Conference Volume 5738

  • Novel In-Plane Semiconductor Lasers IV
  • Carmen Mermelstein; David P. Bour
  • San Jose, California, United States | January 22, 2005

abstract

For blue (Al,In)GaN laser diodes we measure the evolution of the laser beam during its propagation from near-field to far-field. We reconstruct the near-field phase distribution of the waveguide mode. The dynamic behaviour is a tilting of the phase front and a far-field beam-steering on a 10 ns to 100 ns time scale. These observations are discussed in the context of the carrier induced change of the refractive index associated with the antiguiding factor and of thermal dynamics.

© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Ulrich T. Schwarz and Markus Pindl
"Near-field and far-field dynamics of (Al,In)GaN laser diodes", Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, 229 (April 11, 2005); doi:10.1117/12.591044; http://dx.doi.org/10.1117/12.591044


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