Characterization of flare on Intel’s EUV MET

Sang Hun Lee; Manish Chandhok; Jeanette Roberts; Bryan J. Rice

doi:10.1117/12.600154

6 May 2005 Characterization of flare on Intel’s EUV MET

Sang Hun Lee, Manish Chandhok, Jeanette Roberts, Bryan J. Rice

Proceedings Volume 5751, Emerging Lithographic Technologies IX; (2005) https://doi.org/10.1117/12.600154
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Measurements of flare as a function of feature size and orientation have been made on Intel's EUV Micro-Exposure Tool (MET). The predicted value for intrinsic flare from Mid-Spatial Frequency Roughness (MSFR) of mirror surfaces is 3.5%. After addition of the contribution to flare from figure error to that from MSFR, the modeled value is in excellent agreement to the measured flare for the 1 um line of 4.5%. The measured flare in the Horizontal (H) direction is 5% and is slightly higher than the flare in the Vertical (V) direction. Flare variation across the field is less than 1%.

Citation Download Citation

Sang Hun Lee, Manish Chandhok, Jeanette Roberts, and Bryan J. Rice "Characterization of flare on Intel’s EUV MET", Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); https://doi.org/10.1117/12.600154

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