32nm node technology development using interference immersion lithography

Harry Sewell; Diane McCafferty; Louis Markoya; Eric Hendrickx; Jan Hermans; Kurt Ronse

doi:10.1117/12.601012

4 May 2005 32nm node technology development using interference immersion lithography

Harry Sewell, Diane McCafferty, Louis Markoya, Eric Hendrickx, Jan Hermans, Kurt Ronse

Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.601012
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The 38nm and 32nm lithography nodes are the next major targets for optical lithography on the Semiconductor Industry Roadmap. The recently developed water-based immersion lithography using ArF illumination will be able to provide an optical solution for lithography at the 45nm node, but it will not be able to achieve the 38nm or the 32nm nodes as currently defined. To achieve these next lithographic nodes will require new, very high refractive index fluids to replace the water used in current immersion systems. This paper describes tests and experiments using an interference immersion lithography test jig to develop key technology for the 32nm node. Interference imaging printers have been available for years, and with the advent of Immersion Lithography, they have a new use. Interference immersion image printing offers users a rapid, cost-effective way to develop immersion lithography, particularly at extremely high resolutions. Although it can never replace classical lens-based lithography systems for semiconductor device production, it does offer a way to develop resist and fluid technology at a relatively low cost. Its simple image-forming format offers easy access to the basic physics of advanced imaging. Issues such as: Polarization of the image forming light rays; Fluid/resist interaction during exposure; Topcoat film performance; and the Line Edge Roughness (LER) of resists at extremely high resolutions can all be readily studied. Experiments are described and results are provided for work on: 32nm imaging tests; high refractive index fluid testing using 193nm wavelength at resolutions well beyond current lens-based system capabilities; and polarization configuration testing on 45nm, 38nm, and 32nm L/S features. Results on the performance of resists and topcoats are reported for 32nm L/S features.

Citation Download Citation

Harry Sewell, Diane McCafferty, Louis Markoya, Eric Hendrickx, Jan Hermans, and Kurt Ronse "32nm node technology development using interference immersion lithography", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.601012

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