XLA-200: the third-generation ArF MOPA light source for immersion lithography

Toshihiko Ishihara; Robert Rafac; Wayne J. Dunstan; Fedor Trintchouk; Christian Wittak; Richard Perkins; Robert Bergstedt; Walter Gillespie

doi:10.1117/12.600075

12 May 2005 XLA-200: the third-generation ArF MOPA light source for immersion lithography

Toshihiko Ishihara, Robert Rafac, Wayne J. Dunstan, Fedor Trintchouk, Christian Wittak, Richard Perkins, Robert Bergstedt, Walter Gillespie

Author Affiliations +

Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.600075
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The first generation MOPA-based ArF laser XLA-100 was introduced in January 2003 in response to the needs of the high NA ArF scanners for higher power and narrower spectral bandwidth. The second generation product XLA-105 was introduced in early 2004. This paper presents our third generation MOPA-based ArF laser product XLA-200 that is designed and engineered to meet the light source requirements of the ArF immersion lithography. It is expected to be used for 65-nm and 45-nm volume production of semiconductor devices. The XLA-200 is capable of producing a 60W of ultra-line-narrowed 193nm light with the FWHM bandwidth of less than 0.15pm and the E95% integral bandwidth of less than 0.35pm. It features state-of-the-art on-board bandwidth metrology tool that measures E95% bandwidth as well as FWHM. Real-time accurate bandwidth information can be utilized for lithography exposure tool feedback control. The improved dual-chamber laser gas control ensures excellent bandwidth stability, which enables tighter CD control. Together with a lower cost of ooperation, the XLA-200 sets a new performance level for the dual chamber 193nm light source for microlithography.

Citation Download Citation

Toshihiko Ishihara, Robert Rafac, Wayne J. Dunstan, Fedor Trintchouk, Christian Wittak, Richard Perkins, Robert Bergstedt, and Walter Gillespie "XLA-200: the third-generation ArF MOPA light source for immersion lithography", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.600075

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available