We report on our 640x512 pixel InGaAs/InP focal plane array camera for visible and short-wavelength infrared imaging. For this camera, we have fabricated a 640x512 element substrate-removed backside-illuminated InGaAs/InP photodiode array (PDA) with a 25 mm pixel pitch. The PDA is indium bump bonded to a silicon read out integrated circuit. Removing the InP substrate from the focal plane array allows visible wavelengths, which would otherwise be absorbed by the InP substrate due to its 920 nm wavelength cut-off, to reach the pixels' active region. The quantum efficiency is approximately 15% at 500 nm, 70% at 850 nm, 85% at 1310 nm, and 80% at 1550 nm.
Features incorporated into this video-rate, 14-bit output camera include external triggering, windowing, individual pixel correction, 8 operational settings of gain and exposure time, and gamma correction. The readout circuit uses a gate-modulated pixel for high sensitivity imaging over a wide illumination range. This camera is useable for visible imaging as well as imaging eye-safe lasers and is of particular interest seeing laser designators and night vision as well as hyperspectral imaging.© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.