Paper
28 March 2002 Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets
Yehoshua Y. Kalisky, Christophe Labbe, Karol Waichman, Leonid Kravchik, U. Rachum, Peizhen Deng, Jun Xu, Jun Dong, Wei Chen
Author Affiliations +
Abstract
We investigated the operation of a diode-pumped Yb:YAG laser passively Q-switched, by Cr4+:YAG, Cr4+:LuAG, and Cr4+:GSGG saturable absorbers. The results presented here are focused towards the design of a passively Q-switched Yb:YAG microlaser. The free-running performance of both rod and a disk Yb:YAG is characterized, and experimental parameters such as gain and loss are evaluated. These values, together with the value of the stimulated emission cross section, e.g. (sigma) emequals3.3x10-20 cm2 were found to fit between our experimental results and an existing numerical model which relates the experimental and physical parameters to the minimal threshold pumping power. Q-switched pulses with maximum peak power of approximately equals 10.4-kW, and energy of approximately equals 0.5 mJ/pulse were extracted with 30% extraction efficiency.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yehoshua Y. Kalisky, Christophe Labbe, Karol Waichman, Leonid Kravchik, U. Rachum, Peizhen Deng, Jun Xu, Jun Dong, and Wei Chen "Passively Q-switched diode-pumped Yb:YAG laser using Cr4+-doped garnets", Proc. SPIE 4628, Nonlinear Materials: Growth, Characterization, Devices, and Applications, (28 March 2002); https://doi.org/10.1117/12.460816
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Chromium

Ytterbium

Crystals

YAG lasers

Absorption

Semiconductor lasers

Q switched lasers

RELATED CONTENT

Ultra-compact solid state laser
Proceedings of SPIE (May 10 2018)
Absorption spectra of (Cr4+,Yb3+):YAG crystal
Proceedings of SPIE (September 08 1999)
LD-pumped passive Q-switched Nd:LuVO<sub>4</sub> laser
Proceedings of SPIE (December 21 2005)
High power diode pumped passively Q switched Nd S VAP...
Proceedings of SPIE (October 29 2001)

Back to Top