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Proceedings Article

Tunable picosecond pulses from gain-switched grating-coupled surface-emitting laser

[+] Author Affiliations
Oleg V. Smolski, Jeff Bullington

Infinite Photonics, Inc. (USA)

Jun Jiang

Ciena Corp. (USA)

Chandrasekhar Roychoudhuri

Univ. of Connecticut (USA)

G. B. Venus

A.F. Ioffe Physico-Technical Institute (Russia)

Efim L. Portnoi

IOFFE Institute (Russia)

Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, 59 (May 24, 2002); doi:10.1117/12.467966
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From Conference Volume 4651

  • Novel In-Plane Semiconductor Lasers
  • Jerry R. Meyer; Claire F. Gmachl
  • San Jose, CA | January 18, 2002

abstract

We have demonstrated a 60 nm-tunable, 160 psec-width, optical pulses from a 980 nm Grating Coupled Surface Emitting Laser (GCSEL) in an external cavity under nanosecond pump pulses. GCSEL is in-plane laser monolithically integrated with grating outcoupler. The grating was detuned from second order Bragg condition and it served as an efficient interface between planar waveguide and free space. Wavelength tuning was simply achieved by tilting an external flat mirror provided wavelength selective feedback to the GCSEL chip. Gain switched pulses with wavelength linewidth less than 0.1 nm and peak power of 200 mW have been obtained. In our experiments we measured a shortest optical pulses by reducing a distance between external mirror and laser diode chip. This corresponded with decreasing the effective laser cavity length and the cavity round-trip time as well.

© (2002) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Oleg V. Smolski ; Jun Jiang ; Chandrasekhar Roychoudhuri ; G. B. Venus ; Jeff Bullington, et al.
"Tunable picosecond pulses from gain-switched grating-coupled surface-emitting laser", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, 59 (May 24, 2002); doi:10.1117/12.467966; http://dx.doi.org/10.1117/12.467966


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