Paper
7 February 2006 Growth of laser damage in SiO2 under multiple wavelength irradiation
Mary A. Norton, Eugene E. Donohue, Michael D. Feit, Richard P. Hackel, William G. Hollingsworth, Alexander M. Rubenchik, Mary L. Spaeth
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Abstract
In laser systems using frequency conversion, multiple wavelengths will be present on optical components. We have investigated the growth of laser initiated damage in fused silica in the presence of multiple wavelengths. In particular, we measured growth at 351 nm in the presence of 1053 nm near the threshold of growth for 351 nm alone. The data shows that the sum fluence determines the onset of growth as well as the growth rate. The measured growth coefficient is consistent with all the energy being delivered at 351 nm. Additionally, we measured growth at 527 nm in the presence of 1053 nm near the threshold of growth at 527 nm alone. In this case, the sum fluence also determines the growth coefficient but the rate is consistent with all the energy being delivered at 1053 nm. We present the measurements and discuss possible reasons for the behavior.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mary A. Norton, Eugene E. Donohue, Michael D. Feit, Richard P. Hackel, William G. Hollingsworth, Alexander M. Rubenchik, and Mary L. Spaeth "Growth of laser damage in SiO2 under multiple wavelength irradiation", Proc. SPIE 5991, Laser-Induced Damage in Optical Materials: 2005, 599108 (7 February 2006); https://doi.org/10.1117/12.638833
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Cited by 26 scholarly publications.
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KEYWORDS
Laser induced damage

Laser systems engineering

Silica

CCD cameras

Laser damage threshold

Cameras

Frequency converters

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