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Proceedings Article

Self-calibration of wafer scanners using an aerial image sensor

[+] Author Affiliations
Tsuneyuki Hagiwara, Masato Hamatani, Naoto Kondo, Kosuke Suzuki, Hisashi Nishinaga, Jiro Inoue, Koji Kaneko, Shunichi Higashibata

Nikon Corp. (Japan)

Proc. SPIE 4691, Optical Microlithography XV, 871 (July 15, 2002); doi:10.1117/12.474637
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From Conference Volume 4691

  • Optical Microlithography XV
  • Anthony Yen
  • Santa Clara, CA | March 03, 2002

abstract

To improve both the versatility and stability of leading edge wafer scanners, the functionality of an integrated aerial image sensor has been expanded. The system performance of current wafer scanners is a strong function of the quality of image formation of the projection lens. Current wafer scanners use aerial image sensors for best image plane calibration, illumination telecentricity calibration, coma aberration calibration, and distortion calibration. The aerial image sensor is used not only for a scanner's self-calibration but also during the projection lens manufacturing purposes. The slit-scan type aerial image sensor is used for measurement of the intensity distribution of the aerial images. This type of the image sensor can detect the intensity distribution of the aerial image from 110nm L/ S to 6micrometers L/ S. Therefore this aerial image sensor covers most aerial image measurement requirements. In this paper we will focus on the aerial image measurement for self-calibration purposes and their actual performances. We evaluate the actual performance of illumination telecentricity and coma aberration measurement. Evaluation is based upon not only measurement repeatability but also its agreement with resist image measurement results.

© (2002) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Tsuneyuki Hagiwara ; Masato Hamatani ; Naoto Kondo ; Kosuke Suzuki ; Hisashi Nishinaga, et al.
"Self-calibration of wafer scanners using an aerial image sensor", Proc. SPIE 4691, Optical Microlithography XV, 871 (July 15, 2002); doi:10.1117/12.474637; http://dx.doi.org/10.1117/12.474637


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