Growth of PLD Hg1-xCdxTe films on Si-patterned substrates

Marian Kuzma; Grzegorz Wisz; Tamara Ya. Gorbach; Petr S. Smertenko; Sergey V. Svechnikov; Ryszard Ciach; Jerzy Morgiel; Anna Rakowska

doi:10.1117/12.425403

17 April 2001 Growth of PLD Hg_1-xCd_xTe films on Si-patterned substrates

Marian Kuzma, Grzegorz Wisz, Tamara Ya. Gorbach, Petr S. Smertenko, Sergey V. Svechnikov, Ryszard Ciach, Jerzy Morgiel, Anna Rakowska

Author Affiliations +

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425403
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

The growth of Hg_1-xCd_xTe layers obtained by pulse deposition technique on planar and non-planar patterned Si substrates with the tetragonal pyramids and the hemispherical plates was investigated by SEM, TEM spectroscopy, X-ray diffraction, X-ray analysis and I-V characterization. The effects of the Si substrate type, feature of the substrate patterns, substrate temperature, laser shots number on morphological stability of films, growth mode, films crystallinity and charge transport mechanisms on both Hg_{1- x}Cd_xTe/Si interface and on Hg_1-xCd_xTe surface were discussed. The PLD growth of Hg_1-xCd_xTe films on Si substrates has been optimized both to the formation of stoichiometric films (x=0.2) and to the preparation of x-variable films.

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Marian Kuzma, Grzegorz Wisz, Tamara Ya. Gorbach, Petr S. Smertenko, Sergey V. Svechnikov, Ryszard Ciach, Jerzy Morgiel, and Anna Rakowska "Growth of PLD Hg_1-xCd_xTe films on Si-patterned substrates", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425403

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