X-ray diffraction and synchrotron x-ray topography methods were used to analyze strain in GaAs layers grown on GaAs and Si substrates by epitaxial lateral overgrowth (ELO) from a liquid phase. We show the laterally overgrown parts of ELO stripes adhere to the SiO2 mask which results in their downwards bending. The procedure was found which allows to control adhesion of the layers to the mask by adjusting the vertical growth rate of the layers. For the case of GaAs ELO layers grown on Si substrates the ELO stripes bend outwards from the mask due to the tensile strain in the GaAs buffer layer. Recent data published on strain in other than GaAs ELO structures are reviewed and compared with our results.© (2001) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.