Paper
8 May 2001 Photonic crystal systems for high-speed optical memory device on an atomic scale
Author Affiliations +
Proceedings Volume 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001); (2001) https://doi.org/10.1117/12.427006
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '01), 2001, Yokohama, Japan
Abstract
In this study, we examine the switching time of photonic memory devices, which we calculate for several switching schemes. Using the numerical results, we find that the switching scheme in which the switching is mediated by applying a small dc field to the device is the fastest one.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroyuki Nihei and Atsushi Okamoto "Photonic crystal systems for high-speed optical memory device on an atomic scale", Proc. SPIE 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001), (8 May 2001); https://doi.org/10.1117/12.427006
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Cited by 26 scholarly publications.
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KEYWORDS
Switching

Photonic devices

Chemical species

Photonic crystals

Beam controllers

Optical storage

3D modeling

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