Intense two-band photoluminescence from silicon carbide embedded in SiO2 matrix

Xueqin Liu; Jing Zhang; Qiufen Guo; Yinyue Wang

doi:10.1117/12.483097

17 September 2002 Intense two-band photoluminescence from silicon carbide embedded in SiO₂ matrix

Xueqin Liu, Jing Zhang, Qiufen Guo, Yinyue Wang

Proceedings Volume 4918, Materials, Devices, and Systems for Display and Lighting; (2002) https://doi.org/10.1117/12.483097
Event: Photonics Asia, 2002, Shanghai, China

Abstract

Intense two band photoluminescence (PL) at room temperature has been obtained from silicon carbide nanocrystals embedded in a SiO₂ matrix prepared by co-sputtering Si, C and SiO₂ composite targets, and subsequent high temperature annealing. Fourier transform IR spectrosocpy (FTIR) and x-ray photoelectron spectroscopy techniques were employed to analysis the structural properites of composite films. The results showed that SiC nanoparticles were incorporated into the SiO₂ matrix. PL is a consequence of the convolution of two luminescent peaks centered at about 520nm and 400nm. These emissions have been assigned to the C-rich clusters and SiC nanocrystals, respectively.

Citation Download Citation

Xueqin Liu, Jing Zhang, Qiufen Guo, and Yinyue Wang "Intense two-band photoluminescence from silicon carbide embedded in SiO₂ matrix", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); https://doi.org/10.1117/12.483097

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